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Sulfur passivation of GaAs metal-semiconductor field-effect transistor.

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    • Abstract:
      A passivation technique consisting of a (NH[sub 4])[sub 2]S dip followed by GaS deposition has been applied to a GaAs microwave-power metal-semiconductor field-effect transistor (MESFET). The breakdown characteristic of the MESFET is greatly improved upon the (NH[sub 4])[sub 2]S treatment, and a stable passivation effect can be achieved by GaS film deposition. It is found that the FET current-voltage characteristics are closely related to variations in the pinning position of the GaAs surface Fermi level. With the surface passivated, a depletion layer can be properly formed and protected, which is of benefit to the control of the device parameters. © 2000 American Institute of Physics. [ABSTRACT FROM AUTHOR]
    • Abstract:
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